Memory device for performing foggy-fine program operation and method of operating the memory device

Abstract

Provided herein is a memory device for performing a foggy-fine program operation and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells, a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of cells, and a control logic configured to control the program operation by the peripheral circuit. The control logic is configured to control the peripheral circuit to perform a foggy program operation on first memory cells coupled to a first word line, among the plurality of memory cells, perform a foggy program operation on second memory cells coupled to a second word line adjacent to the first word line, among the memory cells, and perform a fine program operation on the first memory cells by decreasing a verify pass voltage to be applied to the second word line.