The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Apr. 29, 2022
Huawei Technologies Co., Ltd., Shenzhen, CN;
Jianxing Liao, Shenzhen, CN;
Wei Wu, Shenzhen, CN;
Leibin Ni, Shenzhen, CN;
Kanwen Wang, Shanghai, CN;
Rui Zhang, Shenzhen, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
A unit includes a first transistor, a memristor, and a resistance modulation unit, where a first port of the resistance modulation unit and a first port of the memristor are coupled to a first electrode of the first transistor, and the first electrode of the first transistor is configured to control the first transistor to be coupled and decoupled. The resistance modulation unit is configured to adjust, based on a resistance of the memristor, a voltage applied to the first electrode of the first transistor. The resistance of the memristor indicates the first data stored by the memristor, and when a voltage indicating second data is input to a second electrode of the first transistor which is configured to output a computation result of the first data and the second data from a third electrode of the first transistor.