The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Feb. 15, 2024
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jeongrim Seo, Paju-si, KR;

Soohong Choi, Paju-si, KR;

Hongjae Shin, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); G09G 3/3225 (2016.01); G09G 3/3266 (2016.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
G09G 3/2096 (2013.01); G09G 3/3225 (2013.01); G09G 3/3266 (2013.01); H10K 59/131 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/0291 (2013.01); G09G 2320/0223 (2013.01);
Abstract

A display panel comprising a display area including a plurality of subpixels, a gate driving circuit disposed in a non-display area outside the display area to supply a plurality of scan signals to the plurality of subpixels, and a plurality of gate high-potential voltage lines which are disposed in the non-display area for transferring a plurality of gate high-potential voltages to the gate driving circuit, wherein plurality of gate high-potential voltage lines include a first gate high-potential voltage line transferring a first gate high-potential voltage for charging a first node of the gate driving circuit, a second gate high-potential voltage line transferring a second gate high-potential voltage for charging a second node of the gate driving circuit, and a third gate high-potential voltage line which is branched from the first gate high-potential voltage line for transferring a third gate high-potential voltage to stabilize a transistor controlling the first node.


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