Read threshold prediction in memory devices using deep neural networks

Abstract

Devices, systems and methods for improving performance of a memory device are described. An example method includes obtaining a plurality of samples corresponding to a probability distribution for each of a plurality of cell voltage distributions of the memory device, each of the plurality of cell voltage distributions corresponding to a read voltage, determining, based on the samples obtained for the plurality of cell voltage distributions, a number of first deep neural networks (DNNs), estimating, for each of the first DNNs, one or more parameters of the corresponding probability distribution based on the plurality of samples, training, based on the samples and the corresponding one or more parameters, each of the first DNNs, and training, based on the samples and the one or more parameters from each of the first DNNs, a second DNN to enable generation of an updated read voltage value for retrieving information from the memory device.