The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 07, 2020
Hamamatsu Photonics K.k., Hamamatsu, JP;
Mitsuhito Mase, Hamamatsu, JP;
Jun Hiramitsu, Hamamatsu, JP;
Akihiro Shimada, Hamamatsu, JP;
Hiroaki Ishii, Hamamatsu, JP;
Toshinori Ito, Hamamatsu, JP;
Yuma Tanaka, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
In a ranging image sensor, each pixel includes an avalanche multiplication region, a charge distribution region, a pair of first charge transfer regions, a pair of second charge transfer regions, a well region, a photogate electrode, a pair of first transfer gate electrodes, and a pair of second transfer gate electrodes. The first multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in the Z direction. The second multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and the well region in the Z direction.