The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Aug. 04, 2022
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Junqiao Wu, Kensington, CA (US);

Kechao Tang, Berkeley, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); B32B 17/06 (2006.01); C03C 3/12 (2006.01); C03C 4/08 (2006.01); C03C 17/34 (2006.01); C03C 23/00 (2006.01);
U.S. Cl.
CPC ...
C03C 3/122 (2013.01); C03C 4/082 (2013.01); C03C 17/3417 (2013.01); C03C 23/007 (2013.01); C03C 2203/52 (2013.01); C03C 2217/24 (2013.01); C03C 2218/328 (2013.01);
Abstract

A material platform with controllable emissivity and fabrication methods are provided that permit the manipulation of thermal radiation detection and IR signal modulation and can be adapted to a variety of uses including infrared camouflage, thermal IR decoys, thermo-reflectance imaging and IR signal modulation. The platform is a multilayer WVOfilm with different W doping levels (x values) and layer thicknesses, forming a graded W-doped construct. In WVOfilms with a total thickness <100 nm, the graded doping of W spreads the originally sharp metal-insulator phase transition (MIT) to a broad temperature range, greatly expanding the temperature window for emissivity modulation.


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