The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Aug. 25, 2021
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Masahiro Murakami, Tokyo, JP;

Ryoya Terakawa, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/04 (2012.01); B24B 53/017 (2012.01);
U.S. Cl.
CPC ...
B24B 37/042 (2013.01); B24B 53/017 (2013.01);
Abstract

A method of polishing a silicon wafer, including a final polishing step including a pre-stage polishing step and a subsequent finish polishing step. The finish polishing step in the final polishing step includes a finish slurry polishing step using a polishing solution having an abrasive grain density of 1×10/cmor more as the second polishing solution; and a pre-polishing step using a polishing solution having an abrasive grain density of 1×10/cmor less as the second polishing solution, the pre-polishing step being performed prior to the finish slurry polishing step. A method of producing a silicon wafer, including the steps of: forming a notch portion on a periphery of a single crystal silicon ingot grown by the Czochralski process; slicing the ingot to obtain a silicon wafer; and subjecting the resulting silicon wafer to the above method of polishing a silicon wafer.


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