The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Mar. 01, 2022
Applicant:

Mellanox Technologies, Ltd., Yokneam, IL;

Inventors:

Anders Gosta Larsson, Hovås, SE;

Attila Fülöp, Gothenburg, SE;

Oren Steinberg, Tal Shahar, IL;

Elad Mentovich, Tel Aviv, IL;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 30/223 (2025.01); H10F 39/00 (2025.01); H10F 77/124 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 30/223 (2025.01); H10F 39/806 (2025.01); H10F 77/1248 (2025.01);
Abstract

Various embodiments provide a PIN-photodetector configured to detect light characterized by a particular wavelength range. The photodetector includes an absorber region including a material having an absorption coefficient of greater than 10cmin the particular wavelength range. The absorber region has an absorber thickness in a direction that is substantially parallel to a detection axis of the photodetector. The photodetector further includes a collector region including a material that is substantially transparent to the particular wavelength range. The collector region has a collector thickness in the direction that is substantially parallel to the detection axis. The collector thickness is greater than the absorber thickness. The absorber region does not spatially overlap with the collector region. The photodetector is configured to operate at a bandwidth of at least 50 GHz.


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