The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jan. 10, 2025
Applicant:

Suzhou Maizheng Techonology Co. Ltd, Jiangsu, CN;

Inventors:

Jian Zhou, Suzhou, CN;

Xinmin Cao, Suzhou, CN;

Chen Chen, Suzhou, CN;

Dengzhi Wang, Suzhou, CN;

Chao Wang, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/166 (2025.01); C23C 16/24 (2006.01); C23C 16/54 (2006.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 10/166 (2025.01); C23C 16/24 (2013.01); C23C 16/54 (2013.01); H10F 71/121 (2025.01);
Abstract

Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading chamber, a preheating chamber, intrinsic process chambers, doping process chambers and an unloading chamber that are linearly arranged in sequence, the chambers being isolated from each other by means of an isolating valve. At least two intrinsic process chambers are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process chamber is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating chamber comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.


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