The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Dec. 17, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Yoshihiro Takei, Ushiku, JP;

Mitsuhiro Sugimoto, Tsukuba, JP;

Byron Lovell Williams, Plano, TX (US);

Jeffrey Alan West, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H10D 86/85 (2025.01);
U.S. Cl.
CPC ...
H10D 86/85 (2025.01); H01L 21/0214 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 23/3157 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/06102 (2013.01);
Abstract

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiONsurface on the dielectric sidewall of the inorganic dielectric plateau. The SiONsurface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.


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