The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Sep. 15, 2021
Applicant:

Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;

Inventors:

Yang Liu, Suzhou, CN;

Xiao Zhang, Suzhou, CN;

Jun Tang, Suzhou, CN;

King Yuen Wong, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/01 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/411 (2025.01); H01L 21/76802 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/01 (2025.01); H10D 62/8503 (2025.01);
Abstract

A nitride-based semiconductor device includes a source electrode and a drain electrode, a first gate electrode, and a second gate electrode. The first gate electrode is disposed between the source electrode and the drain electrode. The first gate electrode includes a first gate bottom portion and a first gate top portion. The first gate top portion is located over the first gate bottom portion and wider than the first gate bottom portion. The second gate electrode is disposed above the first gate electrode and between the source electrode and the drain electrode. The second gate electrode includes a second gate bottom portion and a second gate top portion. The second gate bottom portion is in contact with the first gate bottom portion. The second gate top portion is located over the second gate bottom portion and wider than the second gate bottom portion.


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