The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Aug. 11, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Chuan He, Suzhou, CN;
Xiaoqing Pu, Suzhou, CN;
Ronghui Hao, Suzhou, CN;
Jinhan Zhang, Suzhou, CN;
King Yuen Wong, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, a first and a second field plates, and a first dielectric layer. The first field plate is disposed above the second nitride-based semiconductor layer. The second field plate is discontinuous and disposed above the second nitride-based semiconductor layer and in a position higher than the first field plate. The second field plate includes one or more enclosed discontinuities in a discontinuity region thereof. The first dielectric layer is disposed above the second field plate. The first dielectric layer covers and penetrates the second discontinuous field plate in the discontinuity region such that the second field plate encloses at least one portion of the first dielectric layer within its one or more enclosed discontinuities.