The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

May. 25, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kunihiko Nishimura, Tokyo, JP;

Masahiro Fujikawa, Tokyo, JP;

Shuichi Hiza, Tokyo, JP;

Shinya Nishimura, Tokyo, JP;

Ken Imamura, Tokyo, JP;

Yuki Takiguchi, Tokyo, JP;

Eiji Yagyu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/56 (2006.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/56 (2013.01); H10D 62/40 (2025.01); H10D 62/8303 (2025.01); H01L 2223/5446 (2013.01);
Abstract

A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.


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