The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Sep. 05, 2022
Fujifilm Corporation, Tokyo, JP;
Akihiko Ohtsu, Shizuoka, JP;
Masahiro Yoshidome, Shizuoka, JP;
Yukihisa Kawada, Shizuoka, JP;
Ryo Saito, Shizuoka, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
Provided are a method for inspecting a chemical solution, the method being able to analyze minute foreign matter in the chemical solution, a method for producing a chemical solution, a method for controlling a chemical solution, a method for producing a semiconductor device, a method for inspecting a resist composition, the method being able to analyze minute foreign matter in the resist composition, a method for producing a resist composition, a method for controlling a resist composition, and a method for checking a contamination status of a semiconductor manufacturing apparatus, the method being able to control minute foreign matter in the semiconductor manufacturing apparatus. The method for inspecting a chemical solution includes a step 1X of preparing a chemical solution; a step 2X of applying the chemical solution onto a semiconductor substrate; and a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.