The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Feb. 15, 2025
Applicant:

China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, CN;

Inventors:

Yiqiang Chen, Guangzhou, CN;

Yichi Zhang, Guangzhou, CN;

Chang Liu, Guangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67017 (2013.01); H01L 21/3003 (2013.01); H01L 21/67098 (2013.01); H01L 21/67253 (2013.01);
Abstract

A chip defect modifying device and a chip defect modifying method allow carbon dioxide to be in a supercritical state, enhance a passivation effect of hydrogen on the chip, heat a surface of the chip with microwaves emitted by a microwave module, and further promote a diffusion of hydrogen molecules and atoms in the chip. Sound waves emitted by the ultrasonic module act with a supercritical fluid of the carbon dioxide, causing cavitation of the supercritical fluid, which promotes the diffusion of hydrogen molecules and atoms in the chip. An activator is added to adsorb the hydrogen molecules, which adsorb onto metal positions on a surface of platinum, thereby forming hydrogen atoms and achieving a decomposition of the hydrogen molecules. The number of the hydrogen atoms increases, which promotes a formation of covalent bonds between the hydrogen atoms and atoms in the chip, and thereby enhancing the passivation effect.


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