The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Apr. 07, 2021
Applicants:
Praxair Technology Inc., Danbury, CT (US);
Linde Gmbh, Pullach, DE (US);
Inventors:
Ashwini K. Sinha, East Amherst, NY (US);
Ce Ma, Apex, NC (US);
Aaron Reinicker, Cary, NC (US);
Atul M. Athalye, San Marcos, CA (US);
Assignee:
Praxair Technology, Inc., Danbury, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/3086 (2013.01);
Abstract
Methods for selectively etching SiGe relative to Si are provided. Some of the methods incorporate formation of a passivation layer on a surface of the Si layer to enhance SiGe etchant selectivity and the use of interhalogen gases that preferentially etch the SiGe as opposed to the Si in the presence of the passivation layer. The methods can occur in a cyclic manner until the desired thickness of the SiGe layer is obtained.