The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Aug. 17, 2021
Applicant:
Otto-von-guericke-universität Magdeburg, Magdeburg, DE;
Inventors:
Armin Dadgar, Magdeburg, DE;
Florian Hörich, Magdeburg, DE;
Assignee:
OTTO-VON-GUERICKE-UNIVERSITÄT MAGDEBURG, Magdeburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02458 (2013.01); H01L 21/02252 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/02631 (2013.01);
Abstract
The disclosure relates to a method for growing a semiconductor assembly. The method includes the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crystal quality than in known methods. The disclosure further relates to a semiconductor assembly that is produced accordingly.