The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jun. 22, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jee Yul Kim, Gyeonggi-do, KR;

Jung Ae Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/3459 (2013.01);
Abstract

The present technology relates to an electronic device. According to the present technology, a memory device may include a memory block including a plurality of memory cells, a peripheral circuit configured to generate operation voltages for the plurality of memory cells and transfer the operation voltages to the memory block through bit lines and word lines, and a control logic configured to control, based on temperature information of the memory device, the peripheral circuit to perform a low temperature management operation of increasing a temperature of the memory device. The peripheral circuit may transfer the operation voltages while limiting transferal of a local word line apply voltage to be applied to the memory block through the word lines in response to the low temperature management operation, the local word line apply voltage being included in the operation voltages.


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