The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Apr. 08, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeil Lee, Hwaseong-si, KR;

Kyoungcho Na, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); H01L 22/12 (2013.01);
Abstract

An overlay measurement method for accurately measuring and correcting an overlay in an environment in which a deep ultraviolet (DUV) apparatus and an extreme ultraviolet (EUV) apparatus are used together, a semiconductor device manufacturing method using the overlay measurement method, and an overlay measurement apparatus are provided. The overlay measurement method includes performing an absolute measurement of a position of an overlay mark of at least one of a plurality of layers, based on a fixed position, wherein an exposure process is performed on a first layer of the plurality of layers by using the DUV apparatus, and an exposure process is performed on an nth layer of the plurality of layers, which is an uppermost layer of the plurality of layers, by using the EUV apparatus.


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