The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
May. 09, 2022
Trumpf Photonic Components Gmbh, Ulm, DE;
Stephan Gronenborn, Aachen, DE;
TRUMPF PHOTONIC COMPONENTS GMBH, Ulm, DE;
Abstract
A method of forming an optical structure in a semiconductor substrate includes applying a layer of photoresist on a surface of the semiconductor substrate, exposing the photoresist with exposure light, and subsequently developing the photoresist. After developing, a remaining layer of the photoresist has a photoresist relief profile. The method further includes etching the photoresist and the semiconductor substrate to transfer the photoresist relief profile into the semiconductor substrate to obtain the optical structure in one or more first sub-areas and a support structure in one or more second sub-areas. A thickness of the layer of the photoresist applied to the surface of the semiconductor substrate is greater than a product of a maximum height difference of a relief profile of the optical structure and a ratio between etch rates of the photoresist and of the semiconductor substrate.