The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Nov. 11, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Wei-Zhong Li, Taoyuan, TW;

Hsih-Yang Chiu, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 1/067 (2006.01); G01R 1/073 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2831 (2013.01); G01R 1/0675 (2013.01); G01R 1/07342 (2013.01);
Abstract

A semiconductor wafer includes a scribe line and a probe pad. The scribe line extends along a first direction. The probe pad is disposed on the scribe line and is configured to contact a probe needle. The probe pad includes a first metal layer, a dielectric layer, and a second metal layer. The dielectric layer is disposed on the first metal layer, in which the dielectric layer includes a first recess and a second recess. The second metal layer is configured to connect to the first metal layer, in which the second metal layer includes a first portion and a second portion, and the first portion and the second portion are separated by a distance in a second direction perpendicular to the first direction.


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