The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jan. 25, 2024
Infineon Technologies Canada Inc., Ottawa, CA;
Ramesh G. Karpur, Bangalore, IN;
Abhisek Jain, Delhi, IN;
Lucas Andrew Milner, Sunnyvale, CA (US);
Nan Xing, Allen, TX (US);
Ashutosh Ravindra Joharapurkar, Bangalore, IN;
Zhemin Zhang, Allen, TX (US);
Krishnaswamy Nagaraj, Ashburn, VA (US);
Infineon Technologies Canada Inc., Ottawa, CA;
Abstract
A bidirectional current sense circuit allowing for sensing of power current passing through a power field-effect transistor, regardless of the direction of the power current. The bidirectional current sense circuit outputs a current sense signal representing the power current onto a current sense output node. The bidirectional current sense circuit includes the power field-effect transistor, and two current sense circuits. One of the current sense circuits senses the power current when the power current flows in the positive direction. The other current sense circuit senses the power current when the power current flows in the negative direction.