The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Aug. 29, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Suvi P. Haukka, Helsinki, FI;

Eva E. Tois, Espoo, FI;

Varun Sharma, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/0228 (2013.01); H01L 21/02312 (2013.01);
Abstract

A method for depositing a material within a gap of a substrate in a cyclic deposition process. The method includes, within a reaction chamber, subjecting the gap to at least one deposition cycle, the at least one deposition cycle including: (a) contacting the gap with an inhibitor, wherein the gap includes a plurality of chemisorption sites on a surface thereof, and wherein the inhibitor occupies a portion of the chemisorption sites in the gap; (b) following the contacting the gap with the inhibitor, contacting the gap with a first precursor to chemisorb the first precursor within the gap at chemisorption sites not occupied by the inhibitor; and (c) following the contacting the gap with the first precursor, contacting the gap with a second precursor to form the material within the gap.


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