The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Oct. 01, 2020
Applicant:

Aledia, Echirolles, FR;

Inventors:

Wei Sin Tan, Echirolles, FR;

Pamela Rueda Fonseca, Fontaine, FR;

Pierre Tchoulfian, Grenoble, FR;

Assignee:

ALEDIA, Echirolles, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/821 (2025.01); H10H 29/14 (2025.01); H10H 20/01 (2025.01); H10H 20/818 (2025.01); H10H 20/84 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01); H10H 20/818 (2025.01); H10H 20/821 (2025.01); H10H 20/84 (2025.01);
Abstract

A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the lower part of the SW, and the capping layer along a contour of the SW and including a dielectric material surrounding the upper part of the SW, the base and capping layers having thicknesses e1 and e2 with e1>2.e2, performing anisotropic etching along the direction normal to the basal plane to remove the dielectric material at a top part of the SW and leaving the dielectric material at least in the lower part of the SW.


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