The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Apr. 15, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Masaaki Bairo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H10F 39/809 (2025.01); H01L 23/5223 (2013.01); H01L 24/08 (2013.01); H10F 39/811 (2025.01); H01L 2224/08145 (2013.01);
Abstract

Provided is a semiconductor device capable of improving a capacitance density of a capacitive element without decreasing an operating voltage. The semiconductor device includes: a first semiconductor substrate including a first capacitive element portion including at least one capacitive element; a second semiconductor substrate stacked with respect to the first semiconductor substrate; and a second capacitive element portion formed by a metal bonding portion provided on a bonding surface between the first semiconductor substrate and the second semiconductor substrate. The first and second capacitive element portions are connected to each other in parallel.


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