The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Dec. 24, 2021
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Hiroto Yamagiwa, Hyogo, JP;

Manabu Yanagihara, Osaka, JP;

Takahiro Sato, Toyama, JP;

Masahiro Hikita, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/86 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01); H10D 84/05 (2025.01);
U.S. Cl.
CPC ...
H10D 84/86 (2025.01); H10D 30/47 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/257 (2025.01); H10D 30/015 (2025.01); H10D 84/05 (2025.01);
Abstract

A semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (FETs) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes P-type impurities.


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