Silicon carbide semiconductor device

Abstract

P-type contact regions are disposed apart from one another, and in a p-type base region, at least hole current regions directly beneath the contact regions have an impurity concentration of not more than 5×10/cm. A p-type region for mitigating electric field and disposed between adjacent gate trenches is separated into first portions in contact with the hole current regions and second portions in contact with only a portion of the base region other than the hole current regions. During conduction of body diodes, forward current flows into an n-type drain region through the contact regions, the hole current regions, and the first portions. Thus, in the drain region, holes from the base region are injected only into hole injection regions that are directly beneath the first portions, but are not injected into regions that respectively surround peripheries of the hole injection regions.