The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jan. 31, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Dong Soo Kim, Gyeonggi-do, KR;
Jung Ho Seo, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 21/28 (2025.01); H01L 21/285 (2006.01); H10B 12/00 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/667 (2025.01); H01L 21/28568 (2013.01); H10B 12/31 (2023.02); H10B 12/34 (2023.02); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/513 (2025.01);
Abstract
The present invention relates to a semiconductor device with improved reliability and a method for manufacturing the same. A semiconductor device according to the present invention may comprise: a substrate including a gate trench; a gate insulating layer formed on a surface of the gate trench; and silicon-doped metal nitride on the gate insulating layer, wherein the silicon-doped metal nitride has a silicon concentration of less than 1 at %.