The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jun. 07, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed are a three-dimensional semiconductor device and a method of fabricating the same. The semiconductor device includes: a first active region on a substrate, the first active region including a pair of lower source/drain regions and a lower channel structure; a second active region on the first active region, the second active region including a pair of upper source/drain regions and an upper channel structure; and a gate electrode on the lower and upper channel structures. The gate electrode includes: first and second metal structures, which are respectively provided adjacent bottom and top surfaces of semiconductor layers of the lower and upper channel structures.