The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jul. 16, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Weixing Du, Suzhou, CN;
Jheng-Sheng You, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a gate structure, a first passivation layer, a second passivation layer and a field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The source electrode, the drain electrode, and the gate structure are disposed above the second nitride-based semiconductor layer. The first passivation layer is disposed above the second nitride-based semiconductor layer and covers the gate structure. The second passivation layer is disposed above the first passivation layer and in a region between the source and drain electrodes. The field plate is disposed above the second passivation layer and in the region between the source electrode and drain electrode, in which the field plate contacts at least one enclosed air gap above the first passivation layer.