The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jun. 21, 2021
Applicant:
SK Hynix Nand Product Solutions Corp., Rancho Cordova, CA (US);
Inventor:
Navid Paydavosi, Seattle, WA (US);
Assignee:
SK Hynix NAND Product Solutions Corp., Rancho Cordova, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); C22C 14/00 (2006.01); C22C 27/02 (2006.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/797 (2025.01); C22C 14/00 (2013.01); C22C 27/02 (2013.01); H01L 21/28518 (2013.01); H10D 30/024 (2025.01); H10D 30/031 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6737 (2025.01); H10D 30/6743 (2025.01); H10D 30/6757 (2025.01); H10D 30/794 (2025.01); H10D 62/118 (2025.01); H10D 64/01 (2025.01); H10D 64/256 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract
Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, a semiconductor device comprises a semiconductor channel, a source region adjacent to the semiconductor channel, and a drain region adjacent to the semiconductor channel. In an embodiment, the source region and the drain region each comprise a trench, a conformal silicide lining the trench, and a binary metallic alloy filling the trench.