Semiconductor device including single-crystalline silicon oxide barrier pattern

Abstract

A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode including a plurality of gate electrode portions, a gate electrode portion interposed between adjacent ones of the semiconductor patterns, and a plurality of barrier patterns each comprising an epitaxial layer including single-crystalline silicon oxide. A barrier pattern interposed between each of the adjacent ones of the semiconductor patterns and a respective gate electrode portion.