The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Oct. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junmo Park, Seoul, KR;
Yeonho Park, Seoul, KR;
Wookhyun Kwon, Yongin-si, KR;
Kern Rim, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device may include a substrate including first and second active regions, which are adjacent to each other, first and second active patterns provided on the first and second active regions, respectively, and a gate electrode extended to cross the first and second active patterns. The gate electrode may include first and second electrode portions provided on the first and second active regions, respectively. The second electrode portion may include a first metal pattern, an etch barrier pattern, a second metal pattern, and a third metal pattern sequentially covering the second active pattern. The first electrode portion may include a second metal pattern covering the first active pattern. The etch barrier pattern may be in contact with the first metal pattern and the second metal pattern, and the etch barrier pattern may be thinner than the first metal pattern and thinner than the second metal pattern.