The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

May. 10, 2022
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Lei Sun, San Diego, CA (US);

Aram Akhavan, San Diego, CA (US);

Behnam Sedighi, La Jolla, CA (US);

Tszwing Choi, San Diego, CA (US);

Henry Lau, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 23/522 (2006.01); H03M 1/80 (2006.01); H01G 4/38 (2006.01);
U.S. Cl.
CPC ...
H10D 1/714 (2025.01); H01L 23/5223 (2013.01); H01L 23/5225 (2013.01); H03M 1/802 (2013.01); H10D 1/716 (2025.01); H01G 4/38 (2013.01);
Abstract

A capacitor device comprises a semiconductor substrate with multiple metal layers above the substrate. a first metal layer has a first plurality of bottom terminals elongated in a first direction, and a first plurality of top terminals, electrically coupled to each other, elongated in the first direction and interleaved with the first plurality of bottom terminals. A second metal layer between the semiconductor substrate and the first metal layer has a second plurality of bottom terminals elongated in the first direction, and a second plurality of top terminals, electrically coupled to each other and the first plurality of top terminals, elongated in the first direction and interleaved with the second plurality of bottom terminals.


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