The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Mar. 03, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazuya Yamamoto, Tokyo, JP;

Satoshi Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/07 (2006.01); H03F 1/02 (2006.01); H03F 1/08 (2006.01); H03F 1/30 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/0216 (2013.01); H03F 1/086 (2013.01); H03F 1/301 (2013.01); H03F 2200/451 (2013.01);
Abstract

A power amplifier includes a main transistor configured to amplify an input signal and having characteristics of a drain current delay, a replica transistor having the same characteristics of the drain current delay as the characteristics of the main transistor, a temperature of the replica transistor changing in accordance with a temperature of the main transistor, and an envelope signal of the input signal being input to the replica transistor, an extraction circuit configured to extract a delay component due to the drain current delay from an output voltage of the replica transistor and an adder configured to add the delay component to a gate bias voltage to be applied to the main transistor so as to cancel out the drain current delay of the main transistor.


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