The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Nov. 29, 2022
Shanghai Jiao Tong University, Shanghai, CN;
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, CN;
Guoqiang Xie, Shanghai, CN;
Zhipeng Qin, Shanghai, CN;
Yi Zhou, Shanghai, CN;
Jianxin Chen, Shanghai, CN;
Shanghai Jiao Tong University, Shanghai, CN;
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, CN;
Abstract
A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbFfilm layers with a thickness of ¼ wavelength, and the YbFfilm layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.