The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Oct. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyeok Ahn, Suwon-si, KR;

Myeong-Dong Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/762 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76224 (2013.01); H01L 23/53271 (2013.01); H01L 23/53295 (2013.01); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

A semiconductor memory device may include a device isolation pattern in a substrate and defining a first active section of the substrate and a second active section of the substrate, a first bit line crossing the center of the first active section, a second bit line crossing a center of the second active section, a bit-line contact between the first bit line and a center of the first active section, and a storage node pad on an end of the second active section. The first and second active sections may be spaced apart from each other. The center of the first active section may be adjacent to the end of the second active section. A level of a bottom surface of the first bit line may be lower than a level of a bottom surface of the second bit line.


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