The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
May. 10, 2022
Nanya Technology Corporation, New Taipei, TW;
Tse-Yao Huang, Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application discloses provides a method for fabricating a semiconductor device. The method includes forming a first insulating layer on a substrate; forming a bottom contact in the first insulating layer; sequentially forming a bottom dielectric layer, a lower middle dielectric layer, a higher middle dielectric layer, and a top dielectric layer on the first insulating layer; performing an opening-etching process to form an opening along the top dielectric layer, the higher middle dielectric layer, the lower middle dielectric layer, and the bottom dielectric layer to expose the bottom contact; and forming a conductive structure in the opening. A carbon concentration of the lower middle dielectric layer is greater than a carbon concentration of the bottom dielectric layer.