The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Sep. 01, 2023
Applicant:
Tes Co., Ltd, Yongin-si, KR;
Inventors:
Bong-Soo Kwon, Yongin-si, KR;
Do-Hyun Kim, Yongin-si, KR;
Yu-Ri Park, Yongin-si, KR;
Se-Chan Kim, Yongin-si, KR;
Assignee:
TES CO., LTD, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/31111 (2013.01);
Abstract
A substrate processing method, involving etching a silicon nitride layer selectively in a substrate where a silicon oxide layer and the silicon nitride layer are stacked, includes: wet-etching the silicon nitride layer with a phosphoric acid-based etching solution; and dry-etching a regrowth oxide, which is formed on a surface of the silicon oxide layer in the wet etching step, with an etching gas.