The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jan. 11, 2023
Applicant:
Hamamatsu Photonics K.k., Hamamatsu, JP;
Inventors:
Wei Dong, Hamamatsu, JP;
Kazuyoshi Hirose, Hamamatsu, JP;
Assignee:
HAMAMATSU PHOTONICS K.K., Shizuoka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/3205 (2006.01); H10H 20/819 (2025.01); H10F 30/227 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/32053 (2013.01); H10H 20/819 (2025.01); H10F 30/227 (2025.01); H10H 20/034 (2025.01);
Abstract
Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.