The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Apr. 05, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Hyung Jin Choi, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A memory device comprises: a memory cell array including multiple cells have program states divided on a basis of N threshold voltage levels, and a controller configured to: divide, into N groups corresponding to the N threshold voltage levels, cells selected as a verification target, and perform, if a selected group of the N groups corresponds to remaining threshold voltage levels except a highest threshold voltage level among the N threshold voltage levels, a pass masking operation of determining the selected group to have a program pass state when a number of cells checked to have a program fail state in the selected group is less than a reference number in a verification interval included in a program operation, wherein the controller is configured not to perform, if the selected group corresponds to the highest threshold voltage level, the pass masking operation on the selected group in the verification interval.