The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Jan. 24, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woohyun Kang, Suwon-si, KR;

Garam Kim, Suwon-si, KR;

Jisoo Kim, Suwon-si, KR;

Sangkwon Moon, Suwon-si, KR;

Hyunkyo Oh, Suwon-si, KR;

Jin Gu Jeong, Suwon-si, KR;

Youngjun Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01);
Abstract

A storage device according to an embodiment includes a memory device configured to apply a first program voltage and a first verification voltage to a first word line and output, based on a program state of each of a plurality of memory cells connected to the first word line, a speed information representing a speed characteristic of each of the plurality of memory cells; and a memory controller configured to determine at least one memory cell to be programmed into a predetermined program state; determine, among the at least one memory cell, at least one target memory cell having a first speed characteristic based on the speed information; and perform a state-shaping operation to convert a data corresponding to the predetermined program state for the at least one target memory cell into a value corresponding to a program state different from the predetermined program state.


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