The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Oct. 04, 2022
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;

Inventors:

Young-Min Kim, Seongnam-si, KR;

Eunha Lee, Seoul, KR;

Myoungho Jeong, Seoul, KR;

Young-Hoon Kim, Suwon-si, KR;

Sang-Hyeok Yang, Jeju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/20058 (2018.01); G06T 7/70 (2017.01); G06V 10/762 (2022.01); G06V 10/764 (2022.01); G06V 10/82 (2022.01);
U.S. Cl.
CPC ...
G01N 23/20058 (2013.01); G06T 7/70 (2017.01); G06V 10/763 (2022.01); G06V 10/764 (2022.01); G06V 10/82 (2022.01); G06T 2207/10061 (2013.01); G06T 2207/20084 (2013.01);
Abstract

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.


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