The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Sep. 20, 2022
Applicant:

Xi'an Eswin Material Technology Co., Ltd., Xi'an, CN;

Inventor:

Yang Li, Xi'an, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01);
Abstract

Embodiments of the present disclosure disclose an acquisition equipment and a method for acquiring a nitrogen-doped silicon melt, and a system for manufacturing a nitrogen-doped monocrystalline silicon. The acquisition equipment comprises: a granulation apparatus, which is configured to prepare a plurality of polysilicon particles with uniform particles sizes using polysilicon feedstock blocks; a reaction apparatus, which is configured to enable the plurality of polysilicon particles and nitrogen gas to be subjected to chemical reaction to obtain a plurality of reaction particles, wherein silicon nitride is formed in surface layer of each of the plurality of polysilicon particles by the chemical reaction such that each of the plurality of reaction particles includes a polysilicon core and a silicon nitride coating on the polysilicon core; a melting apparatus, which is configured to melt the plurality of reaction particles to obtain the nitrogen-doped silicon melt comprising silicon atoms and nitrogen atoms.


Find Patent Forward Citations

Li, Yang. (2025). Acquisition equipment and method for acquiring nitrogen-doped silicon melt and manufacturing system of nitrogen-doped monocrystalline silicon (U.S. Patent No. 12486591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12486591

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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