The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Jul. 21, 2022
Applicant:

SK Enpulse Co., Ltd., Gyeonggi-do, KR;

Inventors:

Seung Chul Hong, Seoul, KR;

Deok Su Han, Seoul, KR;

Han Teo Park, Seoul, KR;

Kyu Hun Kim, Gyeonggi-do, KR;

Eun Sun Joeng, Gyeonggi-do, KR;

Jang Kuk Kwon, Seoul, KR;

Hyeong Ju Lee, Seoul, KR;

Assignee:

SK enpulse Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); H01L 21/3212 (2013.01);
Abstract

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.


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