IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12484431 B1

PDFFull Text
Date of Patent:
Nov. 25, 2025

Filed:

Feb. 05, 2020

Method for preparing an organic semiconducting layer, a composition for use therein and an organic electronic device

Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Volodymyr Senkovskyy, Dresden, DE;

Pierre Seidenglanz, Dresden, DE;

Peter Robaschik, Dresden, DE;

Ulrich Denker, Dresden, DE;

Stefan Zott, Dresden, DE;

Anne Fadhel, Dresden, DE;

Martin Ammann, Dresden, DE;

Regina Luschtinetz, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:

Eversheds Sutherland (US) LLP

Primary Examiner:

Kevin M Bernatz

Int. Cl.
CPC ...
H10K 71/16 (2023.01); C07C 13/66 (2006.01); C07C 15/28 (2006.01); C07D 221/18 (2006.01); C07D 251/24 (2006.01); C07D 307/91 (2006.01); C07D 405/04 (2006.01); C07D 405/10 (2006.01); C07D 409/04 (2006.01); C09K 11/06 (2006.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 71/164 (2023.02); C07C 13/66 (2013.01); C07C 15/28 (2013.01); C07D 221/18 (2013.01); C07D 251/24 (2013.01); C07D 307/91 (2013.01); C07D 405/04 (2013.01); C07D 405/10 (2013.01); C07D 409/04 (2013.01); C09K 11/06 (2013.01); H10K 85/615 (2023.02); H10K 85/623 (2023.02); H10K 85/626 (2023.02); H10K 85/654 (2023.02); H10K 85/6572 (2023.02); H10K 85/6574 (2023.02); H10K 85/6576 (2023.02); C07C 2603/24 (2017.05); C07C 2603/40 (2017.05); C09K 2211/1007 (2013.01); C09K 2211/1011 (2013.01); C09K 2211/1018 (2013.01); H10K 85/322 (2023.02);
Abstract

The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C-Ccondensed aryl group and/or at least one unsubstituted or substituted C-Cheteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a Cto Csilyl group, (iv) a Cto Calkyl group, (v) a C to Calkylsilyl group, (vi) a Cto Carylsilyl group, (vii) a Cto Ccycloalkyl group, (viii) a Cto Cheterocycloalkyl group, (ix) a Cto Caiyl group, (x) a Cto Cheteroaryl group, (xi) a Cto Cperfluoro-hydrocarbyl group, or (xii) a Cto Ctrifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.

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