The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Nov. 10, 2021
Applicant:
Nikkiso Co., Ltd., Tokyo, JP;
Inventors:
Kazufumi Takao, Ishikawa, JP;
Yusuke Matsukura, Ishikawa, JP;
Assignee:
Nikkiso Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/817 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/817 (2025.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10H 20/815 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01);
Abstract
A nitride semiconductor light-emitting element includes a substrate, a buffer layer formed on the substrate, an n-type semiconductor layer formed on the buffer layer, and an active layer being formed on the n-type semiconductor layer and comprising a single quantum well structure. A full width at half maximum of an X-ray rocking curve for a (102) plane of the buffer layer is not less than 369.4 arcsec and not more than 492.5 arcsec.