The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jan. 11, 2023
Chongqing Konka Photoelectric Technology Research Institute Co., Ltd., Chongqing, CN;
Zhaobin Huang, Chongqing, CN;
Abstract
A method for growing an electron-blocking layer, an epitaxial layer, and an LED chip are provided in the present disclosure. The epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and an electron-blocking layer. The electron-blocking layer is disposed between the active layer and the P-type semiconductor layer, and the N-type semiconductor layer is disposed on one side of the active layer away from the electron-blocking layer. The electron-blocking layer includes a proximal aluminum barrier layer close to the active layer, a distal aluminum barrier layer close to the P-type semiconductor layer, and an indium well layer disposed between the proximal aluminum barrier layer and the distal aluminum barrier layer. The content of aluminum component in the distal aluminum barrier layer is lower than the content of aluminum component in the proximal aluminum barrier layer.