The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Nov. 25, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Masashi Bando, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 25/59 (2023.01); H04N 25/621 (2023.01); H04N 25/63 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/771 (2023.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8037 (2025.01); H04N 25/59 (2023.01); H04N 25/621 (2023.01); H04N 25/63 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/771 (2023.01); H10F 39/18 (2025.01); H10F 39/191 (2025.01); H10F 39/812 (2025.01);
Abstract

Provided is a solid-state imaging element that includes a first photoelectric conversion unit having a light incident surface on which light is incident, a first gate electrode provided in the first photoelectric conversion unit via an insulating film, and a second photoelectric conversion unit provided on a side of the light incident surface with respect to the first photoelectric conversion unit. The solid-state imaging element further includes a voltage application unit that applies a voltage corresponding to the number of charges accumulated by the second photoelectric conversion unit to the first gate electrode.


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