The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Dec. 16, 2019
Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Daniel Fuhrmann, Heilbronn, DE;

Rosalinda Van Leest, Heilbronn, DE;

Matthias Meusel, Heilbronn, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/124 (2025.01); H10F 10/142 (2025.01); H10F 10/144 (2025.01); H10F 10/161 (2025.01); H10F 10/163 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 10/161 (2025.01); H10F 10/142 (2025.01); H10F 10/144 (2025.01); H10F 10/163 (2025.01); H10F 71/1272 (2025.01); H10F 77/1248 (2025.01);
Abstract

A stacked monolithic upright metamorphic multijunction solar cell, comprising at least one first subcell having a first band gap, a first lattice constant and being made up of germanium by more than 50%, a second subcell, which is disposed above the first subcell and has a second band gap and a second lattice constant, a metamorphic buffer disposed between the first subcell and the second subcell, including a sequence of at least three layers having lattice constants which increase from layer to layer in the direction of the second subcell, and a first tunnel diode, which is situated between the metamorphic buffer and the second subcell and which has an nlayer and a player, the second band gap being larger than the first band gap, the nlayer of the first tunnel diode comprising InAlP, the player of the first tunnel diode comprising an As-containing III-V material.


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